The small-signal performance and model of an LDMOSFET on high-resistivity SOI

Author

Chen, Zhanfei ; Sun, Lingling ; Li, Wenjun ; Cheng, Xinhong ; Song, Zhaorui

Author_Institution

Microelectron. CAD Center, Hang Zhou Dianzi Univ., Hangzhou, China

Volume

3

fYear

2005

fDate

4-7 Dec. 2005

Abstract

We have fabricated an LDMOSFET on high-resistivity silicon-on-insulator (SOI) wafer. The electrical characteristics of the transistor (DC/RF) which is executed at the wafer level are presented. For 1μm gate length, this transistor has an on-state breakdown voltage of greater than 10 V and an off-state breakdown voltage of greater than 20 V, and f_t is greater than 4GHz. The model of this device in DC characteristics is presented using EPFL-EKV MOSFET model, and the main intrinsic parameters are extracted.

Keywords

MOSFET; parameter estimation; semiconductor device breakdown; semiconductor device manufacture; semiconductor device models; silicon-on-insulator; 1 micron; DC characteristics; EPFL-EKV MOSFET model; LDMOSFET model; SOI wafer; electrical characteristics; gate length; high-resistivity SOI; off-state breakdown voltage; on-state breakdown voltage; silicon-on-insulator wafer; Electric variables; Fabrication; MOSFET circuits; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Semiconductor device modeling; Silicon on insulator technology; Threshold voltage; Wireless LAN;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings

Print_ISBN

0-7803-9433-X

Type

conf

DOI

10.1109/APMC.2005.1606583

Filename

1606583