• DocumentCode
    453207
  • Title

    Effect of temperature on current voltage characteristics of lattice mismatched AlmGa1-mN/GaN HEMTs

  • Author

    Parvesh ; Pandeyb, S. ; Haldarc, S. ; Gupta, Mridula ; Gupta, R.S.

  • Author_Institution
    Dept. of Electron. Sci., Delhi Univ., New Delhi, India
  • Volume
    3
  • fYear
    2005
  • fDate
    4-7 Dec. 2005
  • Abstract
    In this paper we present an analytical model of temperature dependence of an AlGaN/GaN HEMTs. The results of the theoretical study concerning the temperature dependence of electron mobility in two dimensional electron gas (2DEG) confined at the AlGaN/GaN interface is reported. The increase in temperature results in decrease in the saturation carrier velocity in HEMTs, which in turn reduces the drain current. The effect of temperature on transconductance of device has also been studied. The results are in good agreement with the existing experimental data.
  • Keywords
    III-V semiconductors; aluminium compounds; electron mobility; gallium compounds; high electron mobility transistors; semiconductor device models; semiconductor heterojunctions; semiconductor junctions; two-dimensional electron gas; wide band gap semiconductors; 2D electron gas; AlmGa1-mN/GaN interface; AlGaN-GaN; HEMT; current voltage characteristics; drain current reduction; electron mobility temperature dependence; lattice mismatched high electron mobility transistors; Aluminum gallium nitride; Analytical models; Carrier confinement; Current-voltage characteristics; Electron mobility; Gallium nitride; HEMTs; Lattices; MODFETs; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings
  • Print_ISBN
    0-7803-9433-X
  • Type

    conf

  • DOI
    10.1109/APMC.2005.1606585
  • Filename
    1606585
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=453207