Title :
Effect of temperature on current voltage characteristics of lattice mismatched AlmGa1-mN/GaN HEMTs
Author :
Parvesh ; Pandeyb, S. ; Haldarc, S. ; Gupta, Mridula ; Gupta, R.S.
Author_Institution :
Dept. of Electron. Sci., Delhi Univ., New Delhi, India
Abstract :
In this paper we present an analytical model of temperature dependence of an AlGaN/GaN HEMTs. The results of the theoretical study concerning the temperature dependence of electron mobility in two dimensional electron gas (2DEG) confined at the AlGaN/GaN interface is reported. The increase in temperature results in decrease in the saturation carrier velocity in HEMTs, which in turn reduces the drain current. The effect of temperature on transconductance of device has also been studied. The results are in good agreement with the existing experimental data.
Keywords :
III-V semiconductors; aluminium compounds; electron mobility; gallium compounds; high electron mobility transistors; semiconductor device models; semiconductor heterojunctions; semiconductor junctions; two-dimensional electron gas; wide band gap semiconductors; 2D electron gas; AlmGa1-mN/GaN interface; AlGaN-GaN; HEMT; current voltage characteristics; drain current reduction; electron mobility temperature dependence; lattice mismatched high electron mobility transistors; Aluminum gallium nitride; Analytical models; Carrier confinement; Current-voltage characteristics; Electron mobility; Gallium nitride; HEMTs; Lattices; MODFETs; Temperature dependence;
Conference_Titel :
Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings
Print_ISBN :
0-7803-9433-X
DOI :
10.1109/APMC.2005.1606585
