DocumentCode :
453208
Title :
A novel LDMOSFET on patterned-SOI for RF wireless applications
Author :
Li, Wenjun ; Chen, Zhanfei ; Liu, Jun ; Sun, Lingling ; Cheng, Xinhong ; Song, Zhaorui ; Yu, Yuehui
Author_Institution :
Microelectron. CAD Center, Hangzhou Dianzi Univ., China
Volume :
3
fYear :
2005
fDate :
4-7 Dec. 2005
Abstract :
A novel patterned-SOI LDMOSFET with a silicon window beneath the p-type channel was designed and fabricated for RF power amplifiers applications. This novel device has good DC and RF characteristics, such as no kink effect on output performance, off-state breakdown up to 13V, and fT=8GHz at DC bias of VG=4V and VD=3.6V, which are better than that of body contact SOI and bulk LDMOSFETs in same wafer with same process conditions.
Keywords :
MOSFET; radiofrequency amplifiers; silicon-on-insulator; 3.6 V; 4 V; 8 GHz; RF power amplifiers; RF wireless applications; body contact SOI; bulk LDMOSFET; lateral double diffused MOSFET; p-type channel; patterned-SOI LDMOSFET; silicon window; silicon-on-insulator; Annealing; Circuits; Etching; Fingers; Leakage current; Parasitic capacitance; Power amplifiers; Radio frequency; Silicon on insulator technology; Thermal conductivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings
Print_ISBN :
0-7803-9433-X
Type :
conf
DOI :
10.1109/APMC.2005.1606586
Filename :
1606586
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=453208
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