A 9-GHz semi-dynamic frequency divide-by-2/3 in GaInP/GaAs HBT

Author

Won, Bokyeon ; Shin, Jaewook ; Jeon, Sanghoon ; Shin, Hyunchol

Author_Institution

Dept. of Radio Sci. & Eng., Kwangwoon Univ., Seoul, South Korea

Volume

3

fYear

2005

fDate

4-7 Dec. 2005

Abstract

A 9-GHz semi-dynamic frequency divide-by-2/3 circuit is presented. It comprises a Miller divider and a static divide-by-two in its feedback path. Unwanted harmonics are suppressed by adopting an image rejection Gilbert-cell mixer and an RC-CR phase shifter at the 9-GHz input port. Implemented in GaInP/GaAs HBT, the 2/3-divider operates over the input frequency range of 4.5-GHz to 9-GHz while it draws 61mA from a 4.2-V supply.

Keywords

III-V semiconductors; bipolar transistor circuits; frequency dividers; gallium arsenide; gallium compounds; indium compounds; microwave mixers; microwave phase shifters; 4.2 V; 4.5 to 9 GHz; 61 mA; GaInP-GaAs; Gilbert-cell mixer; HBT circuits; Miller divider; RC-CR phase shifter; feedback path; harmonic suppression; image rejection; semi-dynamic frequency divider; Circuit synthesis; Feedback; Frequency conversion; Frequency synthesizers; Gallium arsenide; Heterojunction bipolar transistors; Microwave frequencies; Phase shifters; Radio frequency; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings

Print_ISBN

0-7803-9433-X

Type

conf

DOI

10.1109/APMC.2005.1606600

Filename

1606600