Title :
Analyzing memory effect in RF power amplifier using three-box modeling
Author :
Huadong, Wang ; Zhengde, Wu ; Jinfu, Bao ; Xiaohong, Tang
Author_Institution :
Sch. of Electron. Eng., China Univ. of Electron. Sci. & Technol., Chengdu, China
Abstract :
A three-box modeling has been used to simulate the behavioral modeling of the microwave power amplifiers (PAs) in this paper. By this modeling, the cause of the memory effect has been analyzed, and we draw the conclusion that the memory effect is due to effect of the impedance of bias circuit and match network at envelope frequency and second time harmonic frequency. The results of the simulation and measurement have been given to show the memory effect of a power amplifier.
Keywords :
intermodulation distortion; microwave power amplifiers; PA; RF power amplifier; harmonic frequency; impedance effect; memory effect analysis; microwave power amplifiers; three-box model; Artificial neural networks; Cause effect analysis; Circuit simulation; Intermodulation distortion; Nonlinear filters; Nonlinear systems; Power amplifiers; Power system modeling; Radio frequency; Radiofrequency amplifiers;
Conference_Titel :
Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings
Print_ISBN :
0-7803-9433-X
DOI :
10.1109/APMC.2005.1606788
