Title :
GaAs distributed amplifiers with up to 350 GHz gain-bandwidth product for 40 Gb/s LiNbO3 modulator drivers
Author :
Häfele, M. ; Beilenhoff, K. ; Schumacher, H.
Author_Institution :
Dept. of Electron Devices & Circuits, Ulm Univ., Germany
Abstract :
In this paper, we report on two Distributed Amplifier (DA) concepts for 40 Gb/s modulator drivers. Both amplifiers are fabricated in a commercially available 150 nm GaAs power pHEMT technology. The first DA is a six stages design with capacitive division on the gate line. Gain and bandwidth of this amplifier equal to 13.2 dB and 41 GHz, respectively. The other DA consists of nine cascode stages, achieving 20.1 dB gain and a bandwidth of 34.5 GHz. Output power of the two amplifiers is higher than 21 dBm or 7 Vpp up to 20 GHz, which makes them suitable for driving lithium-niobate (LiNbO3) modulators.
Keywords :
distributed amplifiers; driver circuits; gallium arsenide; lithium compounds; modulators; monolithic integrated circuits; niobium compounds; power HEMT; power integrated circuits; 13.2 dB; 150 nm; 20.1 dB; 34.5 GHz; 40 Gbit/s; 41 GHz; GaAs; LiNbO3; distributed amplifiers; gain bandwidth product; gallium arsenide amplifier; high electron mobility transistors; lithium niobate modulators; modulator drivers; power pHEMT technology; Bandwidth; Distributed amplifiers; Driver circuits; FETs; Frequency; Gallium arsenide; PHEMTs; Power amplifiers; Silicon; Voltage;
Conference_Titel :
Microwave Conference, 2005 European
Print_ISBN :
2-9600551-2-8
DOI :
10.1109/EUMC.2005.1608809
