A SiGe controlled-class power amplifier applied to reconfigurable mobile systems

Author

Deltimple, N. ; Kerhervé, E. ; Belot, D. ; Deval, Y. ; Jarry, P.

Author_Institution

IXL Lab., Bordeaux Univ., Talence, France

Volume

1

fYear

2005

fDate

4-6 Oct. 2005

Abstract

An integrated two-stage reconfigurable power amplifier (PA) operating at 1.75 GHz for GSM1800 (DCS) and 1.95 GHz for UMTS/WCDMA is proposed. The PA uses 2.5 V supply voltage and was designed using 0.25 fun SiGe BiCMOS technology from ST Microelectronics. In order to fulfill both DCS and UMTS/W-CDMA requirements, especially on efficiency and linearity respectively, the amplifier is able to shift its two-stage classes of operation independently, by acting on bias circuits and tuning output network. To fulfill UMTS linearity requirement, PA operates in class A/AB mode with 27% PAE at the required 24 dBm output power whereas to fulfill DCS output power and efficiency requirements, PA operates in class AB/F mode with 49% PAE at the required 27 dBm output power and a maximum of 70% PAE is reached.

Keywords

3G mobile communication; BiCMOS analogue integrated circuits; Ge-Si alloys; UHF integrated circuits; UHF power amplifiers; cellular radio; code division multiple access; 1.75 GHz; 1.95 GHz; 2.5 V; BiCMOS technology; GSM1800; SiGe; UMTS linearity; WCDMA; bias circuits; integrated two-stage reconfigurable power amplifier; reconfigurable mobile systems; tuning output network; 3G mobile communication; Control systems; Distributed control; Germanium silicon alloys; Linearity; Multiaccess communication; Power amplifiers; Power generation; Silicon germanium; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2005 European

Print_ISBN

2-9600551-2-8

Type

conf

DOI

10.1109/EUMC.2005.1608892

Filename

1608892