Power amplifier characterization: an active load-pull system based on six-port reflectometer using complex modulated carrier

Author

Bensmida, S. ; Bergeault, E. ; Abib, G.I. ; Huyart, B.

Author_Institution

Departement COMELEC, Ecole Nationale Superieure des Telecommun., Paris, France

Volume

1

fYear

2005

fDate

4-6 Oct. 2005

Abstract

An original measurement system for nonlinear RF power-transistor characterization is presented. This new setup enables measurement and optimization of output power, power added efficiency (PAE) or linearity using active fundamental tuning and six-port reflectometers as vector network analyzers. High and low frequency bias-Tees are inserted at both ports of transistors in order to control source and load impedances at the base-band (envelope) frequency. Experimental results at 1.575 GHz, show an ACPR improvement of 20 dB for a commercial GaAs MESFET power transistor.

Keywords

III-V semiconductors; gallium arsenide; microwave power amplifiers; power MESFET; reflectometers; 1.575 GHz; GaAs; MESFET power transistor; active fundamental tuning; active load-pull system; bias-Tees; complex modulated carrier; nonlinear RF power-transistor; power added efficiency; power amplifier characterization; six-port reflectometer; vector network analyzers; Gallium arsenide; Impedance; Linearity; MESFETs; Power amplifiers; Power generation; Power measurement; Radio frequency; Radiofrequency amplifiers; Tuning;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2005 European

Print_ISBN

2-9600551-2-8

Type

conf

DOI

10.1109/EUMC.2005.1608931

Filename

1608931