Title :
Coplanar ferroelectric phase shifter on silicon substrate with TiO2 buffer layer
Author :
Kim, Ki-Byoung ; Yun, Tae-Soon ; Kim, Hyun-Suk ; Kim, Il-Doo ; Kim, Ho-Gi ; Lee, Jong-Chul
Author_Institution :
RFIC Center, Kwangwoon Univ., Seoul, South Korea
Abstract :
In this paper, a BST coplanar phase shifter with differential phase shift of 98° at 50 V and FoM of 46.7°/dB has been realized. The potential feasibility of integrating BST films into Si substrate as microwave phase shifter and/or coplanar waveguide tunable devices with TiO2 thin film buffer layer has been successfully demonstrated. TiO2 as buffer layer has been successfully grown onto Si substrate by ALD (atomic layer deposition).
Keywords :
atomic layer deposition; buffer layers; coplanar waveguides; microwave phase shifters; silicon; titanium compounds; 50 V; BST coplanar phase shifter; TiO2; atomic layer deposition; buffer layer; coplanar ferroelectric phase shifter; coplanar waveguide tunable device; microwave phase shifter; Binary search trees; Buffer layers; Coplanar waveguides; Ferroelectric films; Ferroelectric materials; Microwave devices; Phase shifters; Semiconductor films; Silicon; Substrates;
Conference_Titel :
Microwave Conference, 2005 European
Print_ISBN :
2-9600551-2-8
DOI :
10.1109/EUMC.2005.1608940
