Fully integrated differential 24 GHz receiver using a 0.8 μm SiGe HBT technology

Author

Sönmez, Ertugrul ; Chartier, Sébastien ; Schick, Christoph ; Trasser, Andreas ; Schumacher, Hermann

Author_Institution

Dept. of Electron Devices & Circuits, Ulm Univ., Germany

Volume

2

fYear

2005

fDate

4-6 Oct. 2005

Abstract

In this paper, the authors demonstrate a fully integrated, differential 24 GHz receiver using a commercially available 0.8 μm Si/SiGe HBT technology. The integrated components are a low-noise amplifier, voltage-controlled oscillator, buffer, down-converter quadrature mixer and 16:1 static frequency divider. The conversion gain was measured to be 33 dB for an intermediate frequency of 200 MHz with an input compression point of -27 dBm. Special emphasis has been placed on the electrical isolation of function blocks on-chip.

Keywords

Ge-Si alloys; bipolar MMIC; buffer circuits; frequency dividers; heterojunction bipolar transistors; low noise amplifiers; microwave receivers; mixers (circuits); radio receivers; silicon; voltage-controlled oscillators; 0.8 micron; 200 MHz; 24 GHz; 33 dB; Si-SiGe; buffer; differential receiver; down converter quadrature mixer; fully integrated receiver; heterojunction bipolar transistors; low noise amplifier; microwave receiver; static frequency divider; voltage controlled oscillator; Frequency conversion; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit technology; Isolation technology; Low-noise amplifiers; Silicon germanium; Topology; Voltage; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2005 European

Print_ISBN

2-9600551-2-8

Type

conf

DOI

10.1109/EUMC.2005.1610033

Filename

1610033