Title :
Reliability evaluation of 5.2GHz CMOS receiver
Author :
Lin, Wei-Cheng ; King, Ya-Chin
Author_Institution :
Dept. of Electr. Eng., Nat. Tsing-Hua Univ., Hsin-Chu, Taiwan
Abstract :
A receiver´s reliability evaluation in relation to its circuit block degradation is investigated with our previously proposed device degradation sub-circuit model. The receiver´s performances are analyzed using both the analog parameters and digital parameters. The analog signal and digital signal degradation are monitored through two figure of merits parameters, SFDR and EVM, respectively. This work suggests that the hot-carrier induced LNA degradation leads to the SFDR degradation, meanwhile, causing EVM to decrease significantly. The VCO performance degradation results in minor impact on SFDR, but strong effects on the EVM.
Keywords :
CMOS integrated circuits; MMIC; low noise amplifiers; microwave receivers; radio receivers; reliability; voltage-controlled oscillators; 5.2 GHz; CMOS receiver reliability; EVM parameter; SFDR degradation; VCO performance degradation; analog parameters; analog signal degradation; circuit block degradation; device degradation sub-circuit model; digital parameters; digital signal degradation; hot-carrier induced LNA; CMOS process; CMOS technology; Capacitance; Circuits; Condition monitoring; Cutoff frequency; Degradation; Radio frequency; Stress; Voltage-controlled oscillators;
Conference_Titel :
Microwave Conference, 2005 European
Print_ISBN :
2-9600551-2-8
DOI :
10.1109/EUMC.2005.1610035