Title :
Application of test structures for monitoring of high frequency characteristics of silicon up to 60 GHz
Author :
Salhi, Faical ; Riedl, Wolfgang ; John, Werner ; Reichl, Herbert
Author_Institution :
FhG-IZM, Berlin, Germany
Abstract :
This paper summarises test structures for continuous determination of electrical properties of material. On the basis of onchip technology a silicon wafer with a resistivity (ρ) of 500 Ohm*cm is characterised. A method for determination of material properties in a frequency range of 4 GHz to at least 60 GHz is presented. Fundamental importance is attached to the relative permittivity εr, and the dissipation factor tanδ. High frequency measurements are compared to simulation results. Finally, the extracted material parameters are presented and discussed.
Keywords :
elemental semiconductors; permittivity; silicon; dissipation factor; frequency range; high frequency measurement; material electrical property; on chip technology; relative permittivity; resistivity; silicon frequency characteristics; silicon wafer; test structure; Conductors; Dielectric losses; Dielectric substrates; Frequency measurement; Integral equations; Materials testing; Monitoring; Permittivity; Resonance; Silicon;
Conference_Titel :
Microwave Conference, 2005 European
Print_ISBN :
2-9600551-2-8
DOI :
10.1109/EUMC.2005.1610143
