A wideband fully integrated SiGe BiCMOS medium power amplifier

Author

Bae, Hyun-Cheol ; Kim, Sang-Hoon ; Song, Young-Joo ; Lee, Sang-Heung ; Lee, Ja-Yol ; Kang, Jin-Young

Author_Institution

Dept. of High Speed SoC Res., Electron. & Telecommun. Res. Inst., Daejeon, South Korea

Volume

3

fYear

2005

fDate

4-6 Oct. 2005

Abstract

In this paper, a wideband 3.0GHz-5.5GHz medium power amplifier has been designed and fabricated using 0.8μm SiGe BiCMOS process technology. Passive elements such as parallel-branch spiral inductor, metal-insulator-metal (MIM) capacitor and three types of resistors are all integrated in this process. This Medium PA is a two stage design with all matching components and bias circuits integrated on-chip. A P1dB of 16.5dBm has been measured with a power gain of 8.5dB at 4.2GHz with a total current consumption of 130mA from a 2.5 V supply voltage at 25°C. The measured 3dB bandwidth is 2.5 GHz, which is a very good result for a fully integrated medium PA. The fabricated circuit occupies a die area of 1.7mm × 0.8mm.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; MIM devices; capacitors; inductors; microwave power amplifiers; resistors; wideband amplifiers; 0.8 micron; 0.8 mm; 130 mA; 2.5 GHz; 2.5 V; 25 C; 3 to 5.5 GHz; 4.2 GHz; 8.5 dB; BiCMOS process technology; MIM capacitor; bias circuits; medium power amplifier; metal-insulator-metal capacitor; parallel-branch spiral inductor; passive elements; wideband power amplifier; BiCMOS integrated circuits; Broadband amplifiers; Germanium silicon alloys; Inductors; Integrated circuit measurements; Integrated circuit technology; Metal-insulator structures; Power amplifiers; Silicon germanium; Spirals;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2005 European

Print_ISBN

2-9600551-2-8

Type

conf

DOI

10.1109/EUMC.2005.1610267

Filename

1610267