DocumentCode
454334
Title
ALAMO: An Improved σ - Space Based Methodology for Modeling Process Parameter Variations in Analog Circuits
Author
Hui Zhang ; Yang Zhao ; Doboli , A.
Author_Institution
Dept. of Electr. & Comput. Eng., Stony Brook Univ., NY
Volume
1
fYear
2006
fDate
6-10 March 2006
Firstpage
1
Lastpage
6
Abstract
This paper describes an original methodology for accurately modeling MOSFET process parameter variations. As compared to other process parameter variation modeling methods, the proposed methodology is capable of correctly modeling not only differences of process/model parameters, but also the process parameter variations for individual devices. This capability is very important for popular analog circuits like current biasing circuits, voltage reference circuits, and single-ended output amplifiers
Keywords
MOSFET; analogue circuits; semiconductor device models; MOSFET process parameter variations; analog circuits; current biasing circuits; single-ended output amplifiers; voltage reference circuits; Analog circuits; Art; Circuit synthesis; Convergence; Coupling circuits; Design automation; Integrated circuit interconnections; MOSFET circuits; Process design; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Design, Automation and Test in Europe, 2006. DATE '06. Proceedings
Conference_Location
Munich
Print_ISBN
3-9810801-1-4
Type
conf
DOI
10.1109/DATE.2006.244058
Filename
1656868
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