Physical-aware simulated annealing optimization of gate leakage in nanoscale datapath circuits

For CMOS technologies below 65nm, gate oxide direct tunneling current is a major component of the total power dissipation. This paper presents a simulated annealing based algorithm for the gate leakage current reduction by simultaneous scheduling, allocation and binding during behavioral synthesis. Gate leakage current reduction is based on the use of functional units of different oxide thickness while simultaneously accounting for process variations. We present a cost function that minimizes leakage and area overhead. The algorithm minimizes the cost function for a given delay trade-off factor. It uses a pre-characterized cell library for tunneling current, delay and area, expressed as analytical functions of the gate oxide thickness T_ox . We tested our approach using a number of behavioral level benchmark circuits characterized for a 45nm library by integrating our algorithm into a high-level synthesis system. We obtained an average gate leakage reduction of 76.88% with an average area overhead of 17.38% for different delay trade-off factors ranging from 1.0 to 1.4