Title :
Performance Enhancement of Blue InGaN Light-Emitting Diodes With InGaN Barriers and Dip-Shaped Last Barrier
Author :
Jian-Yong Xiong ; Shu-Wen Zheng ; Guang-Han Fan
Author_Institution :
Lab. of Nanophotonic Functional Mater. & Devices, South China Normal Univ., Guangzhou, China
Abstract :
The characteristics of blue InGaN light-emitting diodes (LEDs) with InGaN barriers and dip-shaped last barrier are investigated numerically. The simulation results show that the newly designed LEDs have a better performance over the conventional InGaN/GaN and InGaN/InGaN counterparts attributed to the enhancement of carriers confinement induced by the improved potential barrier height for electrons and holes, and the amelioration of electron-hole spatial overlap caused by the reduced polarization effect between the well and barrier. In addition, the efficiency droop and the radiative recombination rate are markedly improved by employing the LEDs with InGaN barriers and dip-shaped last barrier.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; wide band gap semiconductors; InGaN; InGaN barriers; LED; blue InGaN light-emitting diodes; dip-shaped last barrier; efficiency droop; electron-hole spatial overlap; performance enhancement; radiative recombination rate; reduced polarization effect; Aluminum gallium nitride; Charge carrier processes; Electrostatics; Gallium nitride; Light emitting diodes; Optical polarization; Radiative recombination; Efficiency droop; InGaN barriers; light-emitting diodes (LEDs); numerical simulation;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2013.2282218
