Title :
First demonstration of InGaP/InAlGaP based orange laser emitting at 608 nm
Author :
Majid, M.A. ; Al-Jabr, A.A. ; Oubei, H.M. ; Alias, M.S. ; Anjum, D.H. ; Ng, T.K. ; Ooi, B.S.
Author_Institution :
Photonics Lab., King Abdullah Univ. of Sci. & Technol. (KAUST), Thuwal, Saudi Arabia
Abstract :
The fabrication of orange-emitting semiconductor laser on interdiffused InGaP/InAlGaP structure is reported. The lasers lased at 22°C at a wavelength as short as 608 nm with threshold current density of 3.4 KAcm-2 and a maximum output power of ~46 mW. This is the shortest wavelength electrically pumped semiconductor laser emission from the InGaP/InAlGaP structure.
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium compounds; indium compounds; laser beams; optical fabrication; optical pumping; semiconductor lasers; InGaP-InAlGaP; interdiffused structure; maximum output power; orange-emitting semiconductor laser; shortest-wavelength electrically pumped semiconductor laser emission; temperature 22 degC; threshold current density; wavelength 608 nm;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2015.1658
