DocumentCode
456310
Title
Proposal of a New Variant Resolution Function Adapted to the Low Energies in SIMS
Author
Meriem, Berrabah ; Farah, Hamdi ; Faycal, B. ; Dupuy, J.-C.
Volume
1
fYear
2006
fDate
24-28 April 2006
Firstpage
151
Lastpage
156
Abstract
In the analysis by secondary ions mass spectroscopy (SIMS), for low energy, it is necessary to take into account the appearance of the roughness induced being analysed. This phenomenon results in the variation of the depth resolution function (DRF). The new variant resolution function suggested with the fact that is very adapted to profiles SIMS, and the extreme with the multilayer doping of Boron in Silicon.
Keywords
Convolution; Deconvolution; Distortion measurement; Doping profiles; Energy resolution; Instruments; Mass spectroscopy; Nonhomogeneous media; Proposals; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Information and Communication Technologies, 2006. ICTTA '06. 2nd
Print_ISBN
0-7803-9521-2
Type
conf
DOI
10.1109/ICTTA.2006.1684361
Filename
1684361
Link To Document