Proposal of a New Variant Resolution Function Adapted to the Low Energies in SIMS

In the analysis by secondary ions mass spectroscopy (SIMS), for low energy, it is necessary to take into account the appearance of the roughness induced being analysed. This phenomenon results in the variation of the depth resolution function (DRF). The new variant resolution function suggested with the fact that is very adapted to profiles SIMS, and the extreme with the multilayer doping of Boron in Silicon.