A SiGe D-Band Low-Noise Amplifier Utilizing Gain-Boosting Technique

Author

Ulusoy, A. Cagri ; Song, Peter ; Khan, Wasif T. ; Kaynak, Mehmet ; Tillack, Bernd ; Papapolymerou, John ; Cressler, John D.

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

Volume

25

Issue

1

fYear

2015

fDate

Jan. 2015

Firstpage

61

Lastpage

63

Abstract

A D-band low-noise amplifier with gain boosting is implemented in a 0.13 μm SiGe BiCMOS technology, occupying 0.4 mm² of IC area. The circuit consists of two stages of cascode amplifiers with inductive common-base termination, which improves the gain by increasing the output impedance. The measurements show more than 20 dB gain from 110 to 140 GHz, consuming 12 mW of total dc power from a single voltage supply of 2.0 V. The measured noise figure is within 5.5 to 6.5 dB in the same frequency range. To the authors´ knowledge, these results demonstrate the best silicon low-noise amplifier performance up to date in this frequency range.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; low noise amplifiers; millimetre wave amplifiers; millimetre wave integrated circuits; BiCMOS technology; D-band low-noise amplifier; LNA; SiGe; cascode amplifiers; frequency 110 GHz to 140 GHz; gain-boosting technique; inductive common-base termination; power 12 mW; size 0.13 mum; voltage 2.0 V; Gain; Impedance; Integrated circuits; Millimeter wave technology; Noise; Noise measurement; Silicon germanium; BiCMOS integrated circuits; MMICs; SiGe; low-noise amplifier (LNA); millimeter wave integrated circuits;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2014.2369992

Filename

6960114