DocumentCode
456529
Title
Tunnelling current through ultra thin Silicon Dioxide in Submicronic MOS
Author
Bensegueni, Rachida ; Latreche, Saida
Author_Institution
Departement d´´Electronique, Mentouri Univ., Constantine
Volume
1
fYear
0
fDate
0-0 0
Firstpage
1974
Lastpage
1979
Abstract
Our paper relates to the study of ultimate transistors MOS (metal oxide semiconductor) having nanometric thicknesses of gate oxide (<10 nm). These thicknesses correspond to submicronic channel lengths (0.1-0.5 mum). We are interested at the same time in the design and the characterization of these devices. The aim of our work is to highlight the tunnelling currents which appear for nanometric gate oxide thickness
Keywords
MIS devices; MOSFET; electric current; nanoelectronics; tunnelling; 0.1 to 0.5 micron; metal oxide semiconductor; nanometric gate oxide thickness; submicronic MOS; tunnelling current; ultimate transistors MOS; ultra thin silicon dioxide; CMOS technology; Computational modeling; Conductivity; Electrons; Integrated circuit technology; Leakage current; MOSFETs; Silicon compounds; Substrates; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Information and Communication Technologies, 2006. ICTTA '06. 2nd
Conference_Location
Damascus
Print_ISBN
0-7803-9521-2
Type
conf
DOI
10.1109/ICTTA.2006.1684693
Filename
1684693
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