Title :
Tunnelling current through ultra thin Silicon Dioxide in Submicronic MOS
Author :
Bensegueni, Rachida ; Latreche, Saida
Author_Institution :
Departement d´´Electronique, Mentouri Univ., Constantine
Abstract :
Our paper relates to the study of ultimate transistors MOS (metal oxide semiconductor) having nanometric thicknesses of gate oxide (<10 nm). These thicknesses correspond to submicronic channel lengths (0.1-0.5 mum). We are interested at the same time in the design and the characterization of these devices. The aim of our work is to highlight the tunnelling currents which appear for nanometric gate oxide thickness
Keywords :
MIS devices; MOSFET; electric current; nanoelectronics; tunnelling; 0.1 to 0.5 micron; metal oxide semiconductor; nanometric gate oxide thickness; submicronic MOS; tunnelling current; ultimate transistors MOS; ultra thin silicon dioxide; CMOS technology; Computational modeling; Conductivity; Electrons; Integrated circuit technology; Leakage current; MOSFETs; Silicon compounds; Substrates; Tunneling;
Conference_Titel :
Information and Communication Technologies, 2006. ICTTA '06. 2nd
Conference_Location :
Damascus
Print_ISBN :
0-7803-9521-2
DOI :
10.1109/ICTTA.2006.1684693
