Continuous Band Heterostructures: A New Concept for Development of Low-Loss Distributed Bragg Reflectors for Optoelectronic Devices

Author

Safonov, I.M. ; Sukhoivanov, I.A. ; Shulika, O.V. ; Dyomin, A.A. ; Yakushev, S.O. ; Klymenko, M.V. ; Petrov, S.I. ; Lysak, V.V.

Author_Institution

Kharkov Nat. Univ. of Radio Electron.

Volume

2

fYear

2006

fDate

18-22 June 2006

Firstpage

193

Lastpage

198

Abstract

We found a new class of heterostructures which have no discontinuities for one of the band edges and, therefore, called continuous-band heterostructures (CBHs). The promising properties of CBHs are discussed by consideration of their optical and electrical characteristics. CBH-based DBRs provide extremely low series resistance in comparison with conventional DBRs even at low level of doping that can be uniform. Low level of doping leads to low absorption. The absence of composition grading and doping profiles can simplifies growth process. Results for some apt CBHs lattice-matched to GaAs are compared with those for conventional GaAs/AlAs structures

Keywords

III-V semiconductors; distributed Bragg reflectors; doping profiles; gallium arsenide; semiconductor heterojunctions; band edges; continuous-band heterostructures; distributed Bragg reflectors; doping level; Distributed Bragg reflectors; Doping; Electric resistance; Lattices; Optical losses; Optical materials; Optical refraction; Optical superlattices; Optical variables control; Optoelectronic devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Transparent Optical Networks, 2006 International Conference on

Conference_Location

Nottingham

Print_ISBN

1-4244-0235-2

Electronic_ISBN

1-4244-0236-0

Type

conf

DOI

10.1109/ICTON.2006.248372

Filename

4013768