DocumentCode :
459151
Title :
0.8-2.5 GHz SiC Power Amplifiers
Author :
Kistchinsky, A.
Author_Institution :
Microwave Syst. JSC, Moscow
Volume :
1
fYear :
2006
fDate :
Sept. 2006
Firstpage :
171
Lastpage :
172
Abstract :
This paper presents the results of elaboration of 0.8-2.5 GHz SiC-based amplifiers with output power 10 & 20 W at 1 dB gain compression, as well as efficient nonlinear model of CRF24010 (Cree Inc.) transistor, simulation results, design and experimental characteristics of two amplifier chains (single-ended and balanced). Both amplifiers have ultra-small sizes (4.8 and 9.6 cm2) and good electric performance
Keywords :
UHF power amplifiers; power transistors; silicon compounds; wide band gap semiconductors; 0.8 to 2.5 GHz; 10 W; 20 W; CRF24010 transistor; SiC; SiC power amplifier; nonlinear model; Gallium arsenide; Gallium nitride; Helium; IEEE catalog; Microwave technology; Organizing; Power amplifiers; Roentgenium; Silicon carbide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Telecommunication Technology, 2006. CriMiCO '06. 16th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
966-7968-92-8
Electronic_ISBN :
966-7968-92-8
Type :
conf
DOI :
10.1109/CRMICO.2006.256346
Filename :
4023651
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=459151
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