• DocumentCode
    459153
  • Title

    L-Band Low Noise AlGaN/GaN HEMT

  • Author

    Abolduyev, I.M. ; Gladysheva, N.B. ; Dorofeev, A.A. ; Minnebaev, V.M. ; Tchernyavsky, A.A.

  • Author_Institution
    SRI "Pulsar", Moscow
  • Volume
    1
  • fYear
    2006
  • fDate
    Sept. 2006
  • Firstpage
    180
  • Lastpage
    180
  • Abstract
    This paper presents the results of design and manufacture of low noise AlGaN/GaN HEMT for L-band. It has NFmin<1.4 dB gain>15 dB at F=1.5 GHz. GaN HEMT has been designed and manufactured in SRI "Pulsar"
  • Keywords
    III-V semiconductors; UHF field effect transistors; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device manufacture; 1.5 GHz; AlGaN-GaN; L-band; high electron mobility transistor; low noise HEMT; Aluminum gallium nitride; Artificial intelligence; Boolean functions; Data structures; Gallium nitride; HEMTs; Indium tin oxide; L-band; MOCVD; Microwave integrated circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology, 2006. CriMiCO '06. 16th International Crimean Conference
  • Conference_Location
    Sevastopol, Crimea
  • Print_ISBN
    966-7968-92-8
  • Electronic_ISBN
    966-7968-92-8
  • Type

    conf

  • DOI
    10.1109/CRMICO.2006.256351
  • Filename
    4023656
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=459153