DocumentCode
459164
Title
Modeling of the Heterostructure Field-Effect Transistor with Quantum Dots
Author
Timofeyev, V. ; Faleyeva, E.
Author_Institution
Nat. Tech. Univ. of Ukraine
Volume
1
fYear
2006
fDate
Sept. 2006
Firstpage
222
Lastpage
223
Abstract
Characteristics of the heterostructure transistor with quantum dots (QD) on the grounds of two-dimensional numerical model are presented
Keywords
high electron mobility transistors; semiconductor device models; semiconductor heterojunctions; semiconductor quantum dots; charge carriers; heterostructure field-effect transistor modeling; quantum dots; semiconductor materials; two-dimensional numerical model; Gallium arsenide; HEMTs; Hafnium oxide; Helium; Ice; MODFETs; Microwave technology; Organizing; Quantum dots; TV;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology, 2006. CriMiCO '06. 16th International Crimean Conference
Conference_Location
Sevastopol, Crimea
Print_ISBN
966-7968-92-8
Electronic_ISBN
966-7968-92-8
Type
conf
DOI
10.1109/CRMICO.2006.256370
Filename
4023675
Link To Document