Title :
Modeling of the Heterostructure Field-Effect Transistor with Quantum Dots
Author :
Timofeyev, V. ; Faleyeva, E.
Author_Institution :
Nat. Tech. Univ. of Ukraine
Abstract :
Characteristics of the heterostructure transistor with quantum dots (QD) on the grounds of two-dimensional numerical model are presented
Keywords :
high electron mobility transistors; semiconductor device models; semiconductor heterojunctions; semiconductor quantum dots; charge carriers; heterostructure field-effect transistor modeling; quantum dots; semiconductor materials; two-dimensional numerical model; Gallium arsenide; HEMTs; Hafnium oxide; Helium; Ice; MODFETs; Microwave technology; Organizing; Quantum dots; TV;
Conference_Titel :
Microwave and Telecommunication Technology, 2006. CriMiCO '06. 16th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
966-7968-92-8
Electronic_ISBN :
966-7968-92-8
DOI :
10.1109/CRMICO.2006.256370
