DocumentCode
459165
Title
Unlocal Heat Generation Picualitiers in High Power Submicrometer Gate FET´S
Author
Dudinov, K. ; Ippolitov, V. ; Pashkovsky, A.
Author_Institution
Fed. State Unitary Corp., Fryazino
Volume
1
fYear
2006
fDate
Sept. 2006
Firstpage
226
Lastpage
227
Abstract
Simple model for heat generation area size depending on transistor topology and active layers properties is developed. It is shown that real heat generation area size is much less than transistor structure period and the gate drain distance. By three-dimension modeling it is shown that taking into account real heat generation area size raised estimated channel temperature by 10-30 degC
Keywords
micrometry; power field effect transistors; temperature measurement; 10 to 30 degC; active layer properties; channel temperature estimation; field effect transistor; high power submicrometer gate FET; three-dimension modeling; transistor topology; unlocal heat generation picualitier; Electron mobility; FETs; Helium; Power generation; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology, 2006. CriMiCO '06. 16th International Crimean Conference
Conference_Location
Sevastopol, Crimea
Print_ISBN
966-7968-92-8
Electronic_ISBN
966-7968-92-8
Type
conf
DOI
10.1109/CRMICO.2006.256372
Filename
4023677
Link To Document