Title :
Unlocal Heat Generation Picualitiers in High Power Submicrometer Gate FET´S
Author :
Dudinov, K. ; Ippolitov, V. ; Pashkovsky, A.
Author_Institution :
Fed. State Unitary Corp., Fryazino
Abstract :
Simple model for heat generation area size depending on transistor topology and active layers properties is developed. It is shown that real heat generation area size is much less than transistor structure period and the gate drain distance. By three-dimension modeling it is shown that taking into account real heat generation area size raised estimated channel temperature by 10-30 degC
Keywords :
micrometry; power field effect transistors; temperature measurement; 10 to 30 degC; active layer properties; channel temperature estimation; field effect transistor; high power submicrometer gate FET; three-dimension modeling; transistor topology; unlocal heat generation picualitier; Electron mobility; FETs; Helium; Power generation; Tin;
Conference_Titel :
Microwave and Telecommunication Technology, 2006. CriMiCO '06. 16th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
966-7968-92-8
Electronic_ISBN :
966-7968-92-8
DOI :
10.1109/CRMICO.2006.256372
