Trench Power JFET with Integrated Junction Barrier Schottky Diode

Author

Gao, Yang ; Huang, Alex Q. ; Gao, Yan

Author_Institution

Semicond. Power Electron. Center, North Carolina State Univ., Raleigh, ND

Volume

1

fYear

2006

fDate

8-12 Oct. 2006

Firstpage

359

Lastpage

363

Abstract

A novel trench power JFET with integrated junction barrier Schottky (JBS) diode is proposed. A unit JFET cell pitch of 1.1 mum can be obtained. The specific on-resistance of the device is reduced to 14.4 mOmegamiddotmm² which is close to state-of-art of power MOSFET. The integrated JBS diode shows 35% and 30% reduction on forward voltage drop and reverse recovery charge respectively compared with its p-n counterpart from the same integration technology

Keywords

Schottky diodes; junction gate field effect transistors; power semiconductor diodes; power transistors; semiconductor device models; 1.1 micron; forward voltage drop reduction; junction barrier Schottky diode; reverse recovery charge reduction; trench power JFET; Leakage current; MOSFET circuits; P-n junctions; Power MOSFET; Power electronics; Resists; Schottky diodes; Semiconductor diodes; Switches; Voltage; JFET; integration; power; schottky diode; trench;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 2006. 41st IAS Annual Meeting. Conference Record of the 2006 IEEE

Conference_Location

Tampa, FL

ISSN

0197-2618

Print_ISBN

1-4244-0364-2

Electronic_ISBN

0197-2618

Type

conf

DOI

10.1109/IAS.2006.256546

Filename

4025231