Nanocrystalline Silicon in Amorphous Silicon Carbide Matrix for Si Quantum Dots Superlattice

Author

Kurokawa, Yasuyoshi ; Miyajima, Shinsuke ; Yamada, Akira ; Konagai, Makoto

Author_Institution

Dept. of Phys. Electron., Tokyo Inst. of Technol.

Volume

1

fYear

2006

fDate

38838

Firstpage

138

Lastpage

141

Abstract

We have successfully prepared silicon quantum dots/amorphous silicon carbide multilayers by thermal annealing of stoichiometric hydrogenated amorphous silicon carbide (a-SiC:H)/ silicon rich hydrogenated amorphous silicon carbide (a-Si_1-xC_x) multilayers. Raman scattering spectroscopy and transmission electron microscope (TEM) measurement revealed that silicon quantum dots were formed in only a-Si_1-xC_x layers. We also found that the size of silicon quantum dots can be controlled by the thickness of a-Si_1-xC_x layers

Keywords

Raman spectra; annealing; elemental semiconductors; multilayers; nanostructured materials; nanotechnology; semiconductor quantum dots; semiconductor superlattices; silicon; silicon compounds; transmission electron microscopy; wide band gap semiconductors; Raman scattering spectroscopy; Si-SiC; Si_1-xC_x; SiC:H; TEM; amorphous silicon carbide matrix; hydrogenated amorphous silicon carbide; multilayers; nanocrystalline silicon; silicon quantum dots-amorphous silicon carbide multilayers; stoichiometry; superlattice; thermal annealing; transmission electron microscope; Amorphous silicon; Annealing; Nonhomogeneous media; Quantum dots; Raman scattering; Size control; Spectroscopy; Superlattices; Thickness control; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

1-4244-0017-1

Electronic_ISBN

1-4244-0017-1

Type

conf

DOI

10.1109/WCPEC.2006.279383

Filename

4059581