Title :
Nanocrystalline Silicon in Amorphous Silicon Carbide Matrix for Si Quantum Dots Superlattice
Author :
Kurokawa, Yasuyoshi ; Miyajima, Shinsuke ; Yamada, Akira ; Konagai, Makoto
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol.
Abstract :
We have successfully prepared silicon quantum dots/amorphous silicon carbide multilayers by thermal annealing of stoichiometric hydrogenated amorphous silicon carbide (a-SiC:H)/ silicon rich hydrogenated amorphous silicon carbide (a-Si1-xCx) multilayers. Raman scattering spectroscopy and transmission electron microscope (TEM) measurement revealed that silicon quantum dots were formed in only a-Si1-xCx layers. We also found that the size of silicon quantum dots can be controlled by the thickness of a-Si1-xCx layers
Keywords :
Raman spectra; annealing; elemental semiconductors; multilayers; nanostructured materials; nanotechnology; semiconductor quantum dots; semiconductor superlattices; silicon; silicon compounds; transmission electron microscopy; wide band gap semiconductors; Raman scattering spectroscopy; Si-SiC; Si1-xCx; SiC:H; TEM; amorphous silicon carbide matrix; hydrogenated amorphous silicon carbide; multilayers; nanocrystalline silicon; silicon quantum dots-amorphous silicon carbide multilayers; stoichiometry; superlattice; thermal annealing; transmission electron microscope; Amorphous silicon; Annealing; Nonhomogeneous media; Quantum dots; Raman scattering; Size control; Spectroscopy; Superlattices; Thickness control; Transmission electron microscopy;
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
DOI :
10.1109/WCPEC.2006.279383
