• DocumentCode
    460063
  • Title

    Hydrogen Treatment Effects of a-C Films for C60/a-C Superlattice Solar Cells

  • Author

    Honda, Kazuhiro ; Kojima, Nobuhiko ; Imaizumi, Tomohito ; Terayama, Takashi ; Suzuki, Hajime ; Ohshita, Yoshio ; Yamaguchi, Masaki

  • Author_Institution
    Toyota Technol. Inst., Nagoya
  • Volume
    1
  • fYear
    2006
  • fDate
    38838
  • Firstpage
    142
  • Lastpage
    145
  • Abstract
    The film quality improvement of amorphous carbon (a-C) layers for C60/a-C superlattice solar cells has been intended. a-C:N films were deposited by C60-cage breaking, and the layer-by-layer hydrogen treatment method was applied to the a-C:N films for the improvement of the film quality, and the structural change by the hydrogen treatment was investigated. Hydrogen radicals reconstruct carbon bonding structure of a-C:N film surface by etching the weak carbon bonds. Such structural change causes reducing the optical gap and changing the peak intensity ratio of Raman scattering spectra, which is concerned with sp2 cluster size. The spin defect density much depends on the hydrogen treatment time. It is clear that the spin defect density has minimum at the particular time of the hydrogen treatment, so that hydrogen radicals also affect to cut the carbon bonds and induce defects. It is necessary to optimize hydrogen treatment time to improve film quality
  • Keywords
    Raman spectra; amorphous semiconductors; bonds (chemical); carbon; energy gap; etching; fullerenes; optical constants; semiconductor superlattices; solar cells; C:N; C60-C; Raman scattering spectra; amorphous films; bonding structure; carbon bonds; etching; hydrogen radicals; layer-layer hydrogen treatment; optical gap; solar cells; spin defect density; superlattice; Amorphous materials; Bonding; Etching; Hydrogen; Optical films; Optical scattering; Photovoltaic cells; Superlattices; Surface reconstruction; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
  • Conference_Location
    Waikoloa, HI
  • Print_ISBN
    1-4244-0017-1
  • Electronic_ISBN
    1-4244-0017-1
  • Type

    conf

  • DOI
    10.1109/WCPEC.2006.279384
  • Filename
    4059582