Title :
Chemical Bath Deposition of CdS Thin Films on Cuins2 and Si Substrates - A Comparative X-Ray Emission Study
Author :
Bar, M. ; Weinhardt, L. ; Fuchs, O. ; Klaer, J. ; Peiser, J. ; Schock, H.W. ; Heske, C.
Author_Institution :
Dept. of Chem., Nevada Univ., Las Vegas, NV
Abstract :
Wide-gap chalcopyrite CuInS2 ("CIS")-based thin film solar cells are far behind their low-gap counterparts in terms of photovoltaic performance. To date, most chalcopyrite-based devices include a CdS layer, which is deposited in a chemical bath (CBD). In order to shed light on the effects induced by the interface formation, the buried CdS/CIS interface was investigated by X-ray emission spectroscopy. By comparing the CdS/CIS interface with a CdS/Si reference heterostructure, we find that the properties of the substrate determine the chemical structure of the heterointerface. In particular, we find that the formation of the CBD-CdS on Si substrates is delayed compared to that on CIS absorbers
Keywords :
II-VI semiconductors; X-ray photoelectron spectra; cadmium compounds; liquid phase deposition; semiconductor growth; semiconductor heterojunctions; semiconductor thin films; solar cells; CIS absorbers; CdS-CuInS2; CdS-Si; CuInS2; Si; X-ray emission spectroscopy; buried interface; chalcopyrite-based devices; chemical bath deposition; chemical structure; interface formation; low-gap counterparts; photovoltaic performance; reference heterostructure; wide-gap chalcopyrite semiconductor thin films; Chemicals; Computational Intelligence Society; Photovoltaic cells; Photovoltaic systems; Semiconductor thin films; Solar power generation; Spectroscopy; Sputtering; Substrates; Transistors;
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0016-3
Electronic_ISBN :
1-4244-0017-1
DOI :
10.1109/WCPEC.2006.279478
