Title :
Thin Film Cadmium Zinc Telluride Solar Cells
Author :
McCandless, Brian E. ; Buchanan, Wayne A. ; Hanket, Gregory M.
Author_Institution :
Inst. of Energy Conversion, Delaware Univ., Newark, DE
Abstract :
A process for fabricating thin film heterojunction solar cells with cadmium zinc telluride (Cd1-xZnxTe) absorbers is described. Cd1-xZnxTe films with composition from 0lesxles0.6 were deposited by a simple vapor transport (VT) process at 550degC onto moving CdS-coated substrates. Post-deposition thermal treatment in halide vapor ambient yielded high photocurrent, limited primarily by window layer optics. Similar cell performance is demonstrated for ZnCl2 and CdCl2 vapors using treatment protocols which retain film composition. Solar cell efficiency >12% has been achieved for cells with 0 < x < 0.10 (1.50 eV < Eg < 1.58 eV) and efficiency > 8.5% has been achieved for cells with 0.1 < x < 0.3 (1.58 < Eg < 1.60eV). No enhancement of Voc with increasing band gap has been found and may be related to window-absorber interfacial reactivity and resulting junction non-uniformity
Keywords :
II-VI semiconductors; cadmium compounds; heat treatment; photoconductivity; semiconductor growth; semiconductor thin films; solar cells; surface chemistry; thin film devices; vapour deposition; zinc compounds; 550 C; Cd1-xZnxTe; CdS; band gap; interfacial reactivity; photocurrent; post-deposition thermal treatment; thin film cadmium zinc telluride solar cells; thin film heterojunction solar cells; vapor transport process; window-absorber; Cadmium compounds; Heterojunctions; Optical films; Photoconductivity; Photovoltaic cells; Protocols; Substrates; Tellurium; Transistors; Zinc compounds;
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
DOI :
10.1109/WCPEC.2006.279496