Title :
Effect of varying Nitric-Phosphoric Etching Conditions on Admittance Spectroscopy of CdS/CdTe Solar Cells
Author :
Proskuryakov, Y.Y. ; Durose, K. ; Halliday, D.P. ; Oelting, S.
Author_Institution :
Dept. of Phys., Durham Univ.
Abstract :
In this work we investigate electric properties of CdS/CdTe solar cells subjected to nitric-phosphoric (NP) etching procedure, employed for the formation of Te-rich layer before back contacting. The etching time has been used as the only variable parameter in the study, while admittance spectroscopy (AS) was employed for the characterisation of the cells´ electric properties-as well as for the analysis of the defect energy levels and densities
Keywords :
II-VI semiconductors; cadmium compounds; electric admittance; etching; solar cells; wide band gap semiconductors; CdS-CdTe; admittance spectroscopy; defect density; defect energy levels; electric properties; nitric-phosphoric etching; solar cells; Admittance measurement; Energy states; Etching; Frequency dependence; Grain boundaries; Photovoltaic cells; Production; Solar energy; Spectroscopy; Temperature;
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
DOI :
10.1109/WCPEC.2006.279508
