Title :
The Effect of a Post Oxidation In-Situ Nitrogen Anneal on si Surface Passivation
Author :
Jin, Hao ; Weber, K.J. ; Blakers, A.W.
Author_Institution :
Fac. of Eng. & Inf. Technol., Australian Nat. Univ., Canberra, ACT
Abstract :
The thermal stability of Si/SiO2 stacks and Si/SiO2/Si3N4 stacks with and without post oxidation in-situ anneal in nitrogen is investigated by Quasi-steady state photoconductivity decay (QSSPCD) and electronic paramagnetic resonance (EPR). With in-situ annealing in nitrogen, the Si-SiO2 interface shows a reduced density of paramagnetic defects and better thermal stability. Si/SiO2/Si3N 4 stacks have a much slower depassivation rate than Si/SiO 2 stacks due to hydrogen stored in nitride layer
Keywords :
annealing; elemental semiconductors; oxidation; paramagnetic resonance; passivation; photoconductivity; silicon; silicon compounds; thermal stability; EPR; QSSPCD; Si; Si-SiO2; Si-SiO2-Si3N4; depassivation rate; electronic paramagnetic resonance; nitride layer; nitrogen annealing; paramagnetic defects; post oxidation effect; quasisteady state photoconductivity decay; silicon surface passivation; thermal stability; Annealing; Nitrogen; Oxidation; Paramagnetic materials; Paramagnetic resonance; Passivation; Photoconductivity; Surface treatment; Temperature; Thermal stability;
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
DOI :
10.1109/WCPEC.2006.279326
