DocumentCode
460200
Title
A Detailed Study of P-N Junction Solar Cells by Means of Collection Efficiency
Author
Kittidachachan, P. ; Markvart, T. ; Bagnall, D.M. ; Greef, R. ; Ensell, G.J.
Author_Institution
Mater. Res. Group, Southampton Univ.
Volume
1
fYear
2006
fDate
38838
Firstpage
1130
Lastpage
1133
Abstract
The operation of a crystalline silicon solar cell was studied by a methodology based on collection efficiency. The quantum efficiencies of the base, emitter, and depletion layers were determined separately using numerical solutions. The collection efficiency was then determined by the reciprocity theorem. It is shown that the model can provide useful new insight and can be used to extract device parameters by fitting the modelled results to experimental data
Keywords
elemental semiconductors; p-n junctions; semiconductor device models; silicon; solar cells; Si; crystalline silicon solar cell; numerical solutions; p-n junction solar cells; quantum efficiency; reciprocity theorem; Absorption; Charge carrier density; Charge carriers; Crystalline materials; Equations; P-n junctions; Performance analysis; Photovoltaic cells; Radiative recombination; Surface fitting;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location
Waikoloa, HI
Print_ISBN
1-4244-0017-1
Electronic_ISBN
1-4244-0017-1
Type
conf
DOI
10.1109/WCPEC.2006.279360
Filename
4059833
Link To Document