DocumentCode :
460206
Title :
3D-Simulation of EFG Process and Deformation of the Growing Silicon Tube
Author :
Behnken, H. ; Franke, D. ; Kasjanow, H. ; Nikanorov, A. ; Seidl, A.
Author_Institution :
ACCESS e.V., Aachen
Volume :
1
fYear :
2006
fDate :
38838
Firstpage :
1175
Lastpage :
1178
Abstract :
Octagonally shaped silicon tubes are produced at SCHOTT solar by an Edge-defined Film-fed Growth (EFG) technique. The tubes are grown in induction heated EFG furnaces. For this process we developed a coupled thermal-electromagnetic 3D FE-model which serves for analyzing the influences of process parameters and of geometrical shape of components on the distribution of Joule heat and temperature. The calculated temperature distribution in the silicon tube is further coupled to mechanical FE-simulation of stresses, strains, dislocation density and undulation of the tube faces. The investigations aim at the detailed understanding of the process, the improvement of thickness homogeneity, and reduction of stress and deformation of the tube to improve the production yield and the material properties of EFG-wafers
Keywords :
crystal growth from melt; deformation; dislocation density; elemental semiconductors; finite element analysis; semiconductor growth; silicon; EFG process; SCHOTT solar; Si; coupled thermal-electromagnetic 3D FE-model; deformation; dislocation density; edge-defined film-fed growth; induction heated EFG furnaces; mechanical FE-simulation; octagonally shaped silicon tubes; strains; stress; Capacitive sensors; Furnaces; Geometry; Inductors; Plastics; Silicon; Temperature dependence; Temperature distribution; Temperature sensors; Thermal stresses;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
Type :
conf
DOI :
10.1109/WCPEC.2006.279390
Filename :
4059845
Link To Document :
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