DocumentCode
460206
Title
3D-Simulation of EFG Process and Deformation of the Growing Silicon Tube
Author
Behnken, H. ; Franke, D. ; Kasjanow, H. ; Nikanorov, A. ; Seidl, A.
Author_Institution
ACCESS e.V., Aachen
Volume
1
fYear
2006
fDate
38838
Firstpage
1175
Lastpage
1178
Abstract
Octagonally shaped silicon tubes are produced at SCHOTT solar by an Edge-defined Film-fed Growth (EFG) technique. The tubes are grown in induction heated EFG furnaces. For this process we developed a coupled thermal-electromagnetic 3D FE-model which serves for analyzing the influences of process parameters and of geometrical shape of components on the distribution of Joule heat and temperature. The calculated temperature distribution in the silicon tube is further coupled to mechanical FE-simulation of stresses, strains, dislocation density and undulation of the tube faces. The investigations aim at the detailed understanding of the process, the improvement of thickness homogeneity, and reduction of stress and deformation of the tube to improve the production yield and the material properties of EFG-wafers
Keywords
crystal growth from melt; deformation; dislocation density; elemental semiconductors; finite element analysis; semiconductor growth; silicon; EFG process; SCHOTT solar; Si; coupled thermal-electromagnetic 3D FE-model; deformation; dislocation density; edge-defined film-fed growth; induction heated EFG furnaces; mechanical FE-simulation; octagonally shaped silicon tubes; strains; stress; Capacitive sensors; Furnaces; Geometry; Inductors; Plastics; Silicon; Temperature dependence; Temperature distribution; Temperature sensors; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location
Waikoloa, HI
Print_ISBN
1-4244-0017-1
Electronic_ISBN
1-4244-0017-1
Type
conf
DOI
10.1109/WCPEC.2006.279390
Filename
4059845
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