Title :
Effect of Localized Inhomogenity of Shunt Resistance on the Spectral Response and Dark I-V Characteristics of Silicon Solar Cell
Author :
Priyanka ; Lal, M. ; Singh, S.N.
Author_Institution :
Div. of Electr. Mater., Nat. Phys. Lab., Teddington
Abstract :
The I-V characteristics and spectral response of screen printed solar cells and portions diced from them have been measured. It has been found that localized inhomogenity in shunt resistance affect the spectral response of the cell and the region, which had low shunt resistance and spectral response, decides the shunt resistance and spectral response of the complete solar cell
Keywords :
electrical resistivity; silicon; solar cells; Si; dark I-V characteristics; inhomogenity; screen printed solar cells; shunt resistance; silicon solar cell; spectral response; Aluminum alloys; Current-voltage characteristics; Diodes; Electrical resistance measurement; Laboratories; P-n junctions; Photovoltaic cells; Short circuit currents; Silicon; Voltage;
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
DOI :
10.1109/WCPEC.2006.279424
