Title :
Quantum Confinement Model for Phototransport Processes in Nanocrystalline Porous Silicon
Author :
Ciurea, M.L. ; Stavarache, I. ; Iancu, V.
Author_Institution :
National Inst. of Mater. Phys., Bucharest
Abstract :
The paper presents a quantum confinement model which describes the phototransport processes in nanocrystalline porous silicon. The model supposes that the nanocrystallites surface/interface acts as the walls of an infinite rectangular quantum well, introducing discrete confinement energy levels. This model is proved able to also describe the photoluminescence and the temperature dependence of the dark current in the same samples. Its results are in agreement with the microstructure investigations
Keywords :
nanostructured materials; photoluminescence; semiconductor quantum wells; dark current; discrete confinement energy levels; nanocrystalline porous silicon; photoluminescence; quantum confinement; quantum wells; Electron microscopy; Electronic mail; Lamps; Microstructure; Photoconductivity; Photoluminescence; Potential well; Quantum computing; Sensor phenomena and characterization; Silicon; nanocrystalline porous silicon; phototransport; quantum confinement;
Conference_Titel :
International Semiconductor Conference, 2006
Conference_Location :
Sinaia
Print_ISBN :
1-4244-0109-7
DOI :
10.1109/SMICND.2006.283928
