Quantum Confinement Model for Phototransport Processes in Nanocrystalline Porous Silicon

Author

Ciurea, M.L. ; Stavarache, I. ; Iancu, V.

Author_Institution

National Inst. of Mater. Phys., Bucharest

Volume

1

fYear

2006

fDate

27-29 Sept. 2006

Firstpage

49

Lastpage

52

Abstract

The paper presents a quantum confinement model which describes the phototransport processes in nanocrystalline porous silicon. The model supposes that the nanocrystallites surface/interface acts as the walls of an infinite rectangular quantum well, introducing discrete confinement energy levels. This model is proved able to also describe the photoluminescence and the temperature dependence of the dark current in the same samples. Its results are in agreement with the microstructure investigations

Keywords

nanostructured materials; photoluminescence; semiconductor quantum wells; dark current; discrete confinement energy levels; nanocrystalline porous silicon; photoluminescence; quantum confinement; quantum wells; Electron microscopy; Electronic mail; Lamps; Microstructure; Photoconductivity; Photoluminescence; Potential well; Quantum computing; Sensor phenomena and characterization; Silicon; nanocrystalline porous silicon; phototransport; quantum confinement;

fLanguage

English

Publisher

ieee

Conference_Titel

International Semiconductor Conference, 2006

Conference_Location

Sinaia

Print_ISBN

1-4244-0109-7

Type

conf

DOI

10.1109/SMICND.2006.283928

Filename

4063155