DocumentCode :
460325
Title :
60 GHz Band RF MEMS Switch
Author :
Vasilache, D. ; Dragoman, M. ; Constantinidis, G. ; Psychias, Y. ; Vladoianu, F. ; Kostopoulos, T. ; Tibeica, C. ; Bary, L. ; Cismaru, A. ; Neculoiu, D. ; Buiculescu, C. ; Petrini, I. ; Plana, R. ; Muller, A.
Author_Institution :
National Inst. for Res. & Dev. in Microtechnologies, Bucharest
Volume :
1
fYear :
2006
fDate :
27-29 Sept. 2006
Firstpage :
119
Lastpage :
122
Abstract :
This paper reports on design, simulation and manufacturing of a novel millimeter wave MEMS switch structure. The switching operation utilizes electrostatic force which was the only way for high reliability and wafer scale manufacturing techniques at high frequency. The switching element, a bridge type one, shows an actuation voltage of about 24.5V. Different geometries for the switching element were designed and manufactured. The switches exhibit low insertion losses (0.75dB@60GHz) with good isolation (>50dB@60GHz). The simulated and measured results were in a good agreement for the 60GHz frequency band
Keywords :
microswitches; microwave switches; millimetre wave devices; reliability; 0.75 dB; 60 GHz; RF MEMS switch; electrostatic force; millimeter wave MEMS switch; reliability; switching operation; wafer scale manufacturing; Bridge circuits; Electrostatics; Frequency; Microswitches; Millimeter wave technology; Pulp manufacturing; Radiofrequency microelectromechanical systems; Switches; Virtual manufacturing; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
International Semiconductor Conference, 2006
Conference_Location :
Sinaia
Print_ISBN :
1-4244-0109-7
Type :
conf
DOI :
10.1109/SMICND.2006.283946
Filename :
4063173
Link To Document :
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