DocumentCode :
460329
Title :
Photoconductivity of the Amorphous As2Se3 Film in the Medium Infrared Range
Author :
Iovu, M.S. ; Vasiliev, I.A. ; Colomeiko, E.P.
Author_Institution :
Inst. of Appl. Phys., Acad. of Sci. of Moldova, Chisinau
Volume :
1
fYear :
2006
fDate :
27-29 Sept. 2006
Firstpage :
145
Lastpage :
148
Abstract :
The photocurrent spectra and transient current-voltage characteristics for amorphous As2Se3 film sandwiched between two aluminum electrodes are presented. During the measurements, the sample was illuminated with the light from the spectral range 0.8 to 4 mum. The origin of photoresponse related to the involvement in the process of the deep defect centers is discussed
Keywords :
arsenic compounds; chalcogenide glasses; electrochemical electrodes; infrared spectra; photoconductivity; 0.8 to 4 micron; As2Se3; aluminum electrodes; amorphous film; chalcogenide film; deep centers; medium infrared range; photoconductivity; photocurrent spectra; transient current-voltage characteristics; Amorphous materials; Electrodes; Electromagnetic wave absorption; Infrared detectors; Optical fiber communication; Optical films; Optical sensors; Photoconductivity; Steady-state; Voltage; chalcogenide film; deep centers; medium infrared range; photoconductivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
International Semiconductor Conference, 2006
Conference_Location :
Sinaia
Print_ISBN :
1-4244-0109-7
Type :
conf
DOI :
10.1109/SMICND.2006.283953
Filename :
4063180
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=460329
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