• DocumentCode
    460329
  • Title

    Photoconductivity of the Amorphous As2Se3 Film in the Medium Infrared Range

  • Author

    Iovu, M.S. ; Vasiliev, I.A. ; Colomeiko, E.P.

  • Author_Institution
    Inst. of Appl. Phys., Acad. of Sci. of Moldova, Chisinau
  • Volume
    1
  • fYear
    2006
  • fDate
    27-29 Sept. 2006
  • Firstpage
    145
  • Lastpage
    148
  • Abstract
    The photocurrent spectra and transient current-voltage characteristics for amorphous As2Se3 film sandwiched between two aluminum electrodes are presented. During the measurements, the sample was illuminated with the light from the spectral range 0.8 to 4 mum. The origin of photoresponse related to the involvement in the process of the deep defect centers is discussed
  • Keywords
    arsenic compounds; chalcogenide glasses; electrochemical electrodes; infrared spectra; photoconductivity; 0.8 to 4 micron; As2Se3; aluminum electrodes; amorphous film; chalcogenide film; deep centers; medium infrared range; photoconductivity; photocurrent spectra; transient current-voltage characteristics; Amorphous materials; Electrodes; Electromagnetic wave absorption; Infrared detectors; Optical fiber communication; Optical films; Optical sensors; Photoconductivity; Steady-state; Voltage; chalcogenide film; deep centers; medium infrared range; photoconductivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    International Semiconductor Conference, 2006
  • Conference_Location
    Sinaia
  • Print_ISBN
    1-4244-0109-7
  • Type

    conf

  • DOI
    10.1109/SMICND.2006.283953
  • Filename
    4063180
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=460329