Title :
Spin Analog-to-Digital Convertor Using Magnetic Tunnel Junction and Spin Hall Effect
Author :
Yanfeng Jiang ; Yang Lv ; Jamali, Mahdi ; Jian-Ping Wang
Author_Institution :
Univ. of Minnesota, Minneapolis, MN, USA
Abstract :
A spin-based analog-to-digital converter (ADC) using magnetic tunnel junctions (MTJs) is proposed in this letter. Our proposal is based on a novel high-speed low-power MTJ comparator that is controlled through spin Hall effect and voltage-controlled magnetic anisotropy effects. According to the simulation results, spin ADC offers features including high sampling rate, low-power consumption, and less chip area occupation for higher bit resolution while provides the benefit of nonvolatility of conversion results.
Keywords :
Hall effect; analogue-digital conversion; comparators (circuits); low-power electronics; magnetic anisotropy; magnetic tunnelling; ADC; bit resolution; conversion nonvolatility; high-speed low-power MTJ comparator; low-power consumption; magnetic tunnel junction; sampling rate; spin Hall effect; spin analog-to-digital convertor; voltage-controlled magnetic anisotropy effects; CMOS integrated circuits; Hall effect; Integrated circuit modeling; Junctions; Magnetic tunneling; Semiconductor device modeling; Switches; Analog-to-Digital Converter (ADC); Analog-to-digital converter (ADC); Magnetic Tunnel Junction; Spin Hall Effect; Voltage Controlled Magnetic Anisotropy; magnetic tunnel junction; spin hall effect; voltage controlled magnetic anisotropy;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2015.2416689
