Behavior Model and Experimental Research of Monolithic CMOS Compatible Photodetector and Preamplifier

Author

Gu, Ming ; Chen, HongDa ; Huang, Jiale ; Mao, Luhong

Author_Institution

State Key Lab. On Integrated Optoelectron., Chinese Acad. of Sci., Beijing

Volume

3

fYear

2006

fDate

25-28 June 2006

Firstpage

1933

Lastpage

1936

Abstract

The behavior model of the double photo-diodes (DPD) is presented in the paper. The relationship between photocurrent and optical power is shown. With this model, a 1 GHz monolithic photo-detector (PD) and trans-impedance amplifier (TIA) is designed and fabricated with the standard 0.35 mum CMOS technique. The experimental results show that the -3 dB bandwidth is 754 MHz, and the 1 GHz wave of the transient response can be got

Keywords

CMOS integrated circuits; integrated circuit design; monolithic integrated circuits; optical fibre fabrication; photodetectors; photodiodes; preamplifiers; transient response; 0.35 micron; 1 GHz; 754 MHz; DPD; TIA; double photo-diodes; monolithic CMOS; monolithic photo-detector; optical power; photocurrent; photodetector; preamplifier; transient response; transimpedance amplifier; Bandwidth; Integrated circuit interconnections; Optical devices; Optical interconnections; Optical receivers; Optical waveguides; Optoelectronic devices; Photodetectors; Preamplifiers; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications, Circuits and Systems Proceedings, 2006 International Conference on

Conference_Location

Guilin

Print_ISBN

0-7803-9584-0

Electronic_ISBN

0-7803-9585-9

Type

conf

DOI

10.1109/ICCCAS.2006.285051

Filename

4064277