Title :
Use of Accurate Chip Level Modeling and Analysis of a Power Module to establish Reliability Rules
Author :
De Maglie, R. ; Lourdel, G. ; Austin, P. ; Dienot, J.M. ; Schanen, J.L. ; Sanchez, J.L.
Author_Institution :
Lab. d´´Analyses et d´´Archit. des Syst., Toulouse
Abstract :
In order to analyze the electrical behavior of IGBT module, optimize new designs with reliability considerations, accurate models of semiconductor linking with wiring models are needed. So, this paper presents the both semiconductor and wiring modeling approaches and simulation methodology for the analysis of electrical and electromagnetic coupling phenomena. In order to validate this simulation approach, the method is applied to an IGBT 3.3 kV/1200A power module.
Keywords :
insulated gate bipolar transistors; semiconductor device models; IGBT module; chip level modeling; power module; Analytical models; Design optimization; Electromagnetic analysis; Electromagnetic coupling; Electromagnetic modeling; Insulated gate bipolar transistors; Joining processes; Multichip modules; Semiconductor device reliability; Wiring;
Conference_Titel :
Industrial Electronics, 2006 IEEE International Symposium on
Conference_Location :
Montreal, Que.
Print_ISBN :
1-4244-0496-7
Electronic_ISBN :
1-4244-0497-5
DOI :
10.1109/ISIE.2006.295706
