DocumentCode
461285
Title
Use of Accurate Chip Level Modeling and Analysis of a Power Module to establish Reliability Rules
Author
De Maglie, R. ; Lourdel, G. ; Austin, P. ; Dienot, J.M. ; Schanen, J.L. ; Sanchez, J.L.
Author_Institution
Lab. d´´Analyses et d´´Archit. des Syst., Toulouse
Volume
2
fYear
2006
fDate
9-13 July 2006
Firstpage
1571
Lastpage
1576
Abstract
In order to analyze the electrical behavior of IGBT module, optimize new designs with reliability considerations, accurate models of semiconductor linking with wiring models are needed. So, this paper presents the both semiconductor and wiring modeling approaches and simulation methodology for the analysis of electrical and electromagnetic coupling phenomena. In order to validate this simulation approach, the method is applied to an IGBT 3.3 kV/1200A power module.
Keywords
insulated gate bipolar transistors; semiconductor device models; IGBT module; chip level modeling; power module; Analytical models; Design optimization; Electromagnetic analysis; Electromagnetic coupling; Electromagnetic modeling; Insulated gate bipolar transistors; Joining processes; Multichip modules; Semiconductor device reliability; Wiring;
fLanguage
English
Publisher
ieee
Conference_Titel
Industrial Electronics, 2006 IEEE International Symposium on
Conference_Location
Montreal, Que.
Print_ISBN
1-4244-0496-7
Electronic_ISBN
1-4244-0497-5
Type
conf
DOI
10.1109/ISIE.2006.295706
Filename
4078321
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