Title :
The Effects of Doping Profile on Reflection-Type Impatt Diode Amplifiers
Author :
Laton, R.W. ; Haddad, G.I.
Author_Institution :
Electron Physics Laboratory, Department of Electrical Engineering, The University of Michigan, Ann Arbor, Michigan, U.S.A.
Keywords :
Admittance; Bandwidth; Circuit stability; Diodes; Doping profiles; Electrons; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Voltage;
Conference_Titel :
Microwave Conference, 1971. 2nd European
Conference_Location :
Stockholm, Sweden
DOI :
10.1109/EUMA.1971.331417
