DocumentCode

461779

Title

The Effects of Doping Profile on Reflection-Type Impatt Diode Amplifiers

Author

Laton, R.W. ; Haddad, G.I.

Author_Institution

Electron Physics Laboratory, Department of Electrical Engineering, The University of Michigan, Ann Arbor, Michigan, U.S.A.

Volume

1

fYear

1971

fDate

23-28 Aug. 1971

Firstpage

1

Lastpage

4

Keywords

Admittance; Bandwidth; Circuit stability; Diodes; Doping profiles; Electrons; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 1971. 2nd European

Conference_Location

Stockholm, Sweden

Type

conf

DOI

10.1109/EUMA.1971.331417

Filename

4129971