Title :
Microwave Power Transistors
Author :
Luettgenau, George G.
Author_Institution :
TRW Semiconductors Div. of TRW Inc.
Abstract :
The industry offers microwave power transistors with ratings from 20 watts at 1 GHz to 5 watts at 3 GHz. The inclusion of broadband matching networks in the transistor package has yielded power amplifiers with several hundred MHz bandwidth. Solutions for some of the reliability problems; e.g., hot-spot formation, power imbalance, and metal migration, have been found.
Keywords :
Bandwidth; Equivalent circuits; Frequency; Impedance; Inductance; Microwave devices; Microwave transistors; Power amplifiers; Power transistors; Semiconductor device packaging;
Conference_Titel :
Microwave Conference, 1971. 2nd European
Conference_Location :
Stockholm, Sweden
DOI :
10.1109/EUMA.1971.331448
