DocumentCode
461796
Title
Microwave Power Transistors
Author
Luettgenau, George G.
Author_Institution
TRW Semiconductors Div. of TRW Inc.
Volume
1
fYear
1971
fDate
23-28 Aug. 1971
Firstpage
1
Lastpage
9
Abstract
The industry offers microwave power transistors with ratings from 20 watts at 1 GHz to 5 watts at 3 GHz. The inclusion of broadband matching networks in the transistor package has yielded power amplifiers with several hundred MHz bandwidth. Solutions for some of the reliability problems; e.g., hot-spot formation, power imbalance, and metal migration, have been found.
Keywords
Bandwidth; Equivalent circuits; Frequency; Impedance; Inductance; Microwave devices; Microwave transistors; Power amplifiers; Power transistors; Semiconductor device packaging;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1971. 2nd European
Conference_Location
Stockholm, Sweden
Type
conf
DOI
10.1109/EUMA.1971.331448
Filename
4130002
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