Title :
Silicon Impatt Diodes for Operation at Greater than 50 GHz
Author :
Hilsden, F.J. ; Butler, C.M.
Author_Institution :
The General Electric Company Limited, Hirst Research Centre, Wembley, England.
Keywords :
Bonding; Capacitance-voltage characteristics; Conductivity; Diodes; Doping profiles; Epitaxial layers; Frequency; Silicon; Substrates; Temperature;
Conference_Titel :
Microwave Conference, 1973. 3rd European
Conference_Location :
Brussels, Belgium
DOI :
10.1109/EUMA.1973.331592
