Title :
Influence of Transverse Instability on the Efficiency of Impatt Diodes
Author :
van Iperen, B.B.
Author_Institution :
Philips Rcsearch Laboratories, Eindhoven-The Netherlands
Abstract :
Measuring results of large-signal impedance, ac voltage and Io-Vo characteristics (Vo and Io dc voltage and current resp.) on X-band Si Impatt diodes in pulse operation show that the efficiency is limited by saturation of the ae voltage at about 0.25 Vo, independent of the de current and the diode impedance. On reaching this saturation value the Io-Vo curve and the output curve show a knee, indicating the onset of an instability. The effect is explained by taking into account the influence of leakage currents caused by impact ionisation in the drift region on the Io-Vo curves at constant ac voltage.
Keywords :
Diodes; Electrical resistance measurement; Impedance measurement; Knee; Leakage current; Microwave measurements; Power measurement; Pulse measurements; Semiconductor device measurement; Voltage measurement;
Conference_Titel :
Microwave Conference, 1973. 3rd European
Conference_Location :
Brussels, Belgium
DOI :
10.1109/EUMA.1973.331594
