• DocumentCode
    461881
  • Title

    M.I.C. Technology on Fused Silica Substrate: Ku Band Transponder Application

  • Author

    Goloubkoff, M. ; Thebault, C.

  • Author_Institution
    Département Hyperfréquence, Centre National d´´Etudes, des Telecommunications, B.P. 40, Route de Trégastel, 22301 LANNION, FRANCE
  • fYear
    1979
  • fDate
    17-20 Sept. 1979
  • Firstpage
    651
  • Lastpage
    655
  • Abstract
    Circuits on alumina substrate suffer from electrical length reduction, this is a reason for choosing fused silica substrate with a lower dielectric constant. Organic dielectrics are generally not compatible with active device mounting in chip form as needed for mixers or amplifiers. An extensive study of different metallization process on fused silica substrates has been performed. Results are given for various thick films suppliers. Experimental characterization of microstrip lines was performed to obtain : ¿ eff, characteristic impedance and first order parasitic effects such as conduction losses and end capacitance. Different passive functions such as couplers and band pass filters have been analysed at X and Ku band. An application is a ground test transponder (14 - 11 GHz) which has been realized on silica substrate.
  • Keywords
    Circuits; Dielectric constant; Dielectric devices; Dielectric substrates; Impedance; Metallization; Microstrip; Silicon compounds; Thick films; Transponders;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1979. 9th European
  • Conference_Location
    Brighton, UK
  • Type

    conf

  • DOI
    10.1109/EUMA.1979.332652
  • Filename
    4131426