DocumentCode
461881
Title
M.I.C. Technology on Fused Silica Substrate: Ku Band Transponder Application
Author
Goloubkoff, M. ; Thebault, C.
Author_Institution
Département Hyperfréquence, Centre National d´´Etudes, des Telecommunications, B.P. 40, Route de Trégastel, 22301 LANNION, FRANCE
fYear
1979
fDate
17-20 Sept. 1979
Firstpage
651
Lastpage
655
Abstract
Circuits on alumina substrate suffer from electrical length reduction, this is a reason for choosing fused silica substrate with a lower dielectric constant. Organic dielectrics are generally not compatible with active device mounting in chip form as needed for mixers or amplifiers. An extensive study of different metallization process on fused silica substrates has been performed. Results are given for various thick films suppliers. Experimental characterization of microstrip lines was performed to obtain : ¿ eff, characteristic impedance and first order parasitic effects such as conduction losses and end capacitance. Different passive functions such as couplers and band pass filters have been analysed at X and Ku band. An application is a ground test transponder (14 - 11 GHz) which has been realized on silica substrate.
Keywords
Circuits; Dielectric constant; Dielectric devices; Dielectric substrates; Impedance; Metallization; Microstrip; Silicon compounds; Thick films; Transponders;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1979. 9th European
Conference_Location
Brighton, UK
Type
conf
DOI
10.1109/EUMA.1979.332652
Filename
4131426
Link To Document