DocumentCode :
462300
Title :
Monolithic Sensors for Charged-Particle Imaging using Per-Pixel Correlated Double Sampling
Author :
Ahooie, Mona ; Kleinfelder, Stuart
Author_Institution :
California Univ., Irvine, CA
Volume :
1
fYear :
2006
fDate :
Oct. 29 2006-Nov. 1 2006
Firstpage :
54
Lastpage :
58
Abstract :
Monolithic CMOS cameras for direct imaging in electron microscopy and other radiation imaging applications have been developed, including complete cameras of up to 1 M-pixels, and have been used to capture images with superior resolution to that of commercial CCD-based systems. Optimizations for these sensors have been made via simulation and experiment, including studies of the impact of epitaxial silicon ionization region thickness, pixel pitch and diode size optimizations, and per-pixel correlated double sampling (CDS) technology. The per-pixel CDS scheme has demonstrated reductions in kT/C noise by a factor of four. It requires only one read instead of two reads plus pre- and post-integration subtraction, and is hence faster than alternate schemes. In addition, observation of Random Telegraph Signal noise (RTS) in small-capacitance pixels is demonstrated.
Keywords :
CMOS image sensors; electron microscopy; CCD-based systems; charged-particle imaging; diode size optimizations; electron microscopy; epitaxial silicon ionization region thickness; monolithic CMOS cameras; monolithic sensors; per-pixel correlated double sampling; pixel pitch; radiation imaging applications; random telegraph signal noise; CMOS image sensors; Cameras; Charge-coupled image sensors; Electron microscopy; Image resolution; Image sampling; Ionizing radiation sensors; Radiation imaging; Sampling methods; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium Conference Record, 2006. IEEE
Conference_Location :
San Diego, CA
ISSN :
1095-7863
Print_ISBN :
1-4244-0560-2
Electronic_ISBN :
1095-7863
Type :
conf
DOI :
10.1109/NSSMIC.2006.356107
Filename :
4178946
Link To Document :
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