Title :
Dependence of the Noise Behavior on the Drain Current for Thin Film Transistors
Author :
Ya-Hsiang Tai ; Chun-Yi Chang ; Chung-Lun Hsieh ; Yung-Hsuan Yang ; Wei-Kuang Chao ; Huan-Ean Chen
Author_Institution :
Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
In this letter, a noise formula is newly proposed to calculate the low frequency noise for the three kinds of amorphous silicon, low temperature polycrystalline silicon, and amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs). It is found that the noise behavior of the TFT depends on its drain current in a simple manner. Based on the analysis, the ratios of drain current to the noise level for these TFTs are compared. It reveals that a-IGZO TFT is the best candidate to be used in the active pixel sensor.
Keywords :
amorphous semiconductors; elemental semiconductors; gallium compounds; indium compounds; semiconductor device noise; silicon; thin film transistors; InGaZnO; Si; amorphous indium gallium zinc oxide; amorphous silicon; drain current; low frequency noise; low temperature polycrystalline silicon; noise behavior; thin film transistor; Amorphous silicon; Current measurement; Noise measurement; Signal to noise ratio; Thin film transistors; Thin-film transistor (TFTs); active pixel sensor (APS); amorphous indium-gallium-zinc oxide (a-IGZO); low frequency noise (LFN);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2013.2291565
