DocumentCode :
462499
Title :
Characterization and Scintillation Studies of a Solid-State Photomultiplier
Author :
McClish, Mickel ; Dokhale, Purushottam ; Christian, James ; Stapels, Christopher ; Shah, Kanai S.
Author_Institution :
Radiat. Monitoring Devices, Inc., Watertown, MA
Volume :
2
fYear :
2006
fDate :
Oct. 29 2006-Nov. 1 2006
Firstpage :
1257
Lastpage :
1262
Abstract :
The solid-state photomultiplier (SSPM) is a relatively new semiconductor based photodetector that, by using hundreds of micro silicon Geiger-APDs, possesses high gain (105 to 106) and low noise while needing only low voltage (40 - 60 V) to operate. The fast response and high intrinsic gain of SSPMs makes them attractive for timing applications, in particular for positron emission tomography (PET). Here we present the results from the characterization of a 1 times 1 mm2 SSPM (SSPM-050701GR-TO18, Photonique SA). Several intrinsic SSPM characteristics were measured such as gain, noise, and linearity. Single photon spectra were also collected. Additionally, scintillation studies were performed. The SSPM was coupled to CsI:Tl and LSO scintillation crystals and exposed to various common laboratory radionuclides to measure photopeak energy resolutions. The linearity of the SSPM, when coupled with a scintillator, was also measured. Using a 22Na source (511 keV annihilation photons), the coincidence timing resolution was measured with the SSPM coupled to LSO. Lastly, we introduce our complementary metal oxide semiconductor (CMOS) based SSPM and show preliminary characterizations.
Keywords :
photodetectors; photomultipliers; silicon radiation detectors; solid scintillation detectors; 22Na source; LSO scintillation crystals; SSPM-050701GR-TO18; complementary metal oxide semiconductor; lutetium orthosilicate; microsilicon Geiger-APD; positron emission tomography; semiconductor photodetector; solid-state photomultiplier; Energy resolution; Linearity; Low voltage; Photodetectors; Photomultipliers; Positron emission tomography; Semiconductor device noise; Silicon; Solid state circuits; Timing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium Conference Record, 2006. IEEE
Conference_Location :
San Diego, CA
ISSN :
1095-7863
Print_ISBN :
1-4244-0560-2
Electronic_ISBN :
1095-7863
Type :
conf
DOI :
10.1109/NSSMIC.2006.356072
Filename :
4179226
Link To Document :
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