DocumentCode
462560
Title
Wafer-Bonded Silicon Gamma-Ray Detectors
Author
Wulf, Eric A. ; Hobart, Karl D. ; Kub, Francis J. ; Kurfess, James D. ; Phlips, Bernard F. ; Tadjer, Marko
Author_Institution
Naval Res. Lab., Washington, DC
Volume
3
fYear
2006
fDate
Oct. 29 2006-Nov. 1 2006
Firstpage
1624
Lastpage
1629
Abstract
Direct hydrophobic wafer bonding was used to create a 1 mm thick gamma-ray detector from two 0.5 mm thick wafers. Full depletion and efficient charge transport across the wafer bond is demonstrated. The energy resolution of the detector is 8.9 keV FWHM for 60 keV gamma rays at room temperature with a leakage of 3.5 muA while operating at 700 V. Improvements in the technique should allow for thicker detectors with better energy resolution.
Keywords
gamma-ray apparatus; wafer bonding; charge transport; full charge depletion; hydrophobic wafer bonding; wafer-bonded silicon gamma-ray detectors; Conductivity; Energy resolution; Fabrication; Gamma ray detection; Gamma ray detectors; Silicon; Temperature; Wafer bonding; X-ray detection; X-ray detectors;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium Conference Record, 2006. IEEE
Conference_Location
San Diego, CA
ISSN
1095-7863
Print_ISBN
1-4244-0560-2
Electronic_ISBN
1095-7863
Type
conf
DOI
10.1109/NSSMIC.2006.354208
Filename
4179321
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